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Silicon Ingots |
Basic parameters of silicon ingots for semiconductor application.
| Growth metod |
CZ |
| Type/Dopant |
N-type /Phosphorus or Antimony or Arsenic doped
P-type /Boron doped |
Diameter |
from 2" - to 8" |
| Orientation |
(100) or (111) |
Resistivity |
0,002 - 140 Ohm*cm |
Oxygen content |
<10*1017 at/cm3 (<20 ppma) or per customer's specification |
Carbon content |
<5*1016 at/cm3 (<1 ppma) or per customer's specification |
Dislocation |
None |
Basic parameters of silicon ingots for solar application.
| Type/Dopant |
P/Boron or N/Phosphorus |
| Square size |
Pseudosquare: 103x103mm or 125x125mm or 156x156mm
Special shape per customer's specification |
Diagonal |
125mm, 135mm, 150mm, 165mm, 195mm, 205mm |
| Orientation |
(100) +3o |
Resistivity |
0,5-2,0 Ohm*cm; 3,0-6,0 Ohm*cm |
Oxygen content |
<10*1017 at/cm3 (<20 ppma) |
Carbon content |
<5*1016 at/cm3 (<1 ppma) |
| RRV |
<12% |
| Life time |
>8 μsec |
Dislocation |
None |
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