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Silicon Wafers |
Basic parameters of silicon wafers for semiconductor application.
| Type/Dopant |
N-type /Phosphorus or Antimony or Arsenic doped
P-type /Boron doped |
Diameter |
2", 3", 4", 5", 6" |
Diameter tolerance |
minimum +0,3 mm
standard +0,5 mm |
| Orientation |
(100) or (111) |
| Resistivity |
0,002 - 140 Ohm*cm |
Thicknesses variation of all delivery |
minimum 10 μm
standard 25 μm |
Total thickness variation |
for diameter 2"
for diameter 3"
for diameter 4"
for diameter 5"
for diameter 6" |
MINIMUM
5 microns
5 microns
5 microns
8 microns
15 microns |
STANDARD
10 microns
10 microns
15 microns
15 microns
20 microns |
Bow |
for diameter 2"
for diameter 3"
for diameter 4"
for diameter 5"
for diameter 6" |
MINIMUM
20 microns
25 microns
30 microns
35 microns
50 microns |
STANDARD
25 microns
30 microns
35 microns
40 microns
60 microns |
Surface |
As-cut, lapped, etched, one side and double side polished |
| Oxygen content |
<10*1017 at/cm3 (<20 ppma) - standard
(7-9)*1017 at/cm3 (14-18 ppma) - special |
| Carbon content |
<10*1016 at/cm3 (<2 ppma) - standard
<5*1016 at/cm3 (<1 ppma) - special |
Basic parameters of silicon wafers for solar application.
| Type/Dopant |
P/Boron or N/Phosphorus |
| Square size |
Pseudosquare: 103x103mm or 125x125mm or 156x156mm
Special shape per customer's specification |
| Diagonal |
125mm, 135mm, 150mm, 165mm, 195mm, 205mm |
| Orientation |
(100) +3o |
| Resistivity |
0,5-2,0 Ohm*cm; 3,0-6,0 Ohm*cm |
| Thickness |
minimum - 180+/-30 μm |
| Surface |
After cutting and cleaning |
| Oxygen content |
<10*1017 at/cm3 (<20 ppma) |
| Carbon content |
<5*1016 at/cm3 (<1 ppma) |
| RRV |
<12% |
| Life time |
>8 μsec |
| Dislocation |
None |
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