Specification2

 


 

 

 

 

Silicon Wafers

Basic parameters of silicon wafers for semiconductor application.


Type/Dopant

N-type /Phosphorus or Antimony or Arsenic doped

P-type /Boron doped

Diameter

2", 3", 4", 5", 6"

Diameter tolerance

minimum +0,3 mm

standard +0,5 mm

Orientation (100) or (111)
Resistivity 0,002 - 140 Ohm*cm

Thicknesses variation of all delivery

minimum 10 μm

standard 25 μm


Total thickness variation

for diameter 2"

for diameter 3"

for diameter 4"

for diameter 5"

for diameter 6"

MINIMUM

5 microns

5 microns

5 microns

8 microns

15 microns

STANDARD

10 microns

10 microns

15 microns

15 microns

20 microns


Bow

for diameter 2"

for diameter 3"

for diameter 4"

for diameter 5"

for diameter 6"

MINIMUM

20 microns

25 microns

30 microns

35 microns

50 microns

STANDARD

25 microns

30 microns

35 microns

40 microns

60 microns

 Surface

As-cut, lapped, etched, one side and double side polished

Oxygen content

<10*1017 at/cm3 (<20 ppma) - standard

(7-9)*1017 at/cm3 (14-18 ppma) - special

Carbon content

<10*1016 at/cm3 (<2 ppma) - standard

<5*1016 at/cm3 (<1 ppma) - special


Basic parameters of silicon wafers for solar application.

 

Type/Dopant

P/Boron or N/Phosphorus

Square size

Pseudosquare: 103x103mm or 125x125mm or 156x156mm

Special shape per customer's specification

Diagonal 125mm, 135mm, 150mm, 165mm, 195mm, 205mm
Orientation (100) +3o
Resistivity 0,5-2,0 Ohm*cm; 3,0-6,0 Ohm*cm
Thickness minimum - 180+/-30 μm
Surface After cutting and cleaning
Oxygen content <10*1017 at/cm3 (<20 ppma)
Carbon content <5*1016 at/cm3 (<1 ppma)
RRV <12%
Life time >8 μsec
Dislocation None



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