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Silicon Wafers
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PRINCIPAL PARAMETERS OF CZ-SILICON POLISHED WAFERS
1.ELECTRIC/CRYSTALLINE PARAMETERS
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Growth method
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Cz
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Type/Dopant
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N-type /Phosphorus or Antimony or Arsenic doped
P-type /Boron doped
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Orientation
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SEMI M1-95 (100), (111) on-orientation or off-orientation +0,2o
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Resistivity
(interval of average value)
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0,002 - 50 (ohm*cm)
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Resistivity toleranz
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min.20%, standard 30%
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Radial resistivity variation
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<12% (resistivity 1 - 15 ohm*cm)
<16% (resistivity 0,005 -1 or 15 - 50 ohm*cm)
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Oxygen content
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(2 - 9)*1017 AT/CM3 (8 - 36 ppma, ST ASTM F121 - 79) - standard
(7 - 9)*1017 AT/CM3 (28 - 36 ppma,ST ASTM F121- 79) - special
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Carbon content
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<1*1017 AT/CM3 (2 ppma, ST ASTM F123 -83) - maximum
<5*1016 AT/CM3 (1 ppma, ST ASTM F123 -83) - standard
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Dislocation
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None
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2.PHYSICAL PARAMETERS
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Diameter
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2 inches, 3 inches, 4 inches, 5 inches, 6 inches
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Diameter toleranz
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minimum +0,3 mm
standard +0,5 mm
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Thicknesses variation of all delivery
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minimum 15 microns
standard 25 microns
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Total thickness variation
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for diameter 2"
for diameter 3"
for diameter 4"
for diameter 5"
for diameter 6"
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MINIMUM
5 microns
5 microns
8 microns
10 microns
15 microns
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STANDARD
10 microns
10 microns
15 microns
15 microns
20 microns
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Orientation of flats
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SEMI M1 - 95
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Bow
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for diameter 2"
for diameter 3"
for diameter 4"
for diameter 5"
for diameter 6"
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MINIMUM
20 microns
25 microns
30 microns
35 microns
50 microns
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STANDARD
25 microns
30 microns
35 microns
40 microns
60 microns
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Surface
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Mirror polished
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Haze, orange peel
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None
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Back side
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lapped and etched or polished
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