Silicon Wafers


PRINCIPAL PARAMETERS OF CZ-SILICON POLISHED WAFERS

         

    1.ELECTRIC/CRYSTALLINE PARAMETERS


Growth method

Cz

 Type/Dopant

 N-type /Phosphorus or Antimony or Arsenic doped

P-type /Boron doped

 Orientation

SEMI M1-95 (100), (111) on-orientation or off-orientation +0,2o

 Resistivity

(interval of average value)

 0,002 - 50 (ohm*cm)

 Resistivity toleranz 

 min.20%, standard 30%

 Radial resistivity variation

<12% (resistivity 1 - 15 ohm*cm) 

<16% (resistivity 0,005 -1 or 15 - 50 ohm*cm)

 Oxygen content

(2 - 9)*1017 AT/CM3 (8 - 36 ppma, ST ASTM F121 - 79) - standard

(7 - 9)*1017 AT/CM3 (28 - 36 ppma,ST ASTM F121- 79) - special

 Carbon content

<1*1017 AT/CM3 (2 ppma, ST ASTM F123 -83) - maximum

<5*1016 AT/CM3 (1 ppma, ST ASTM F123 -83) - standard

 Dislocation

None


  

     2.PHYSICAL PARAMETERS


 Diameter

2 inches, 3 inches, 4 inches, 5 inches, 6 inches

 Diameter toleranz

minimum +0,3 mm

standard +0,5 mm

Thicknesses variation of all delivery

minimum 15 microns

standard 25 microns


Total thickness variation

 for diameter 2"

for diameter 3"

for diameter 4"

for diameter 5"

for diameter 6"

MINIMUM

5 microns

5 microns

8 microns

10 microns

15 microns

STANDARD

10 microns

10 microns

15 microns

15 microns

20 microns

 Orientation of flats

 SEMI M1 - 95


Bow

 for diameter 2"

for diameter 3"

for diameter 4"

for diameter 5"

for diameter 6"

MINIMUM

20 microns

25 microns

30 microns

35 microns

50 microns

STANDARD

25 microns

30 microns

35 microns

40 microns

60 microns

 Surface

Mirror polished

Haze, orange peel

None

Back side

lapped and etched or polished



Specification1 Specification2 Specification3 Specification4